IndiumV3, Chine, Analysis, bibRecord, 000936

Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy

Identifieur interne : 000936 ( Chine/Analysis ); précédent : 000935; suivant : 000937

Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy

Auteurs : RBID : Pascal:11-0360212

Descripteurs français

Pascal (Inist)
- Addition étain, Couche ITO, Admittance, Mobilité porteur charge, Contact ohmique, Travail sortie, Méthode temps vol, Impédance, Chlore composé organique, Oxyde d'indium, Semiconducteur organique, Dérivé du biphényle, Matériau conducteur, Matériau transparent, Matériau dopé, 7330, ITO.

English descriptors

KwdEn :
- Admittance, Biphenyl derivatives, Charge carrier mobility, Conducting material, Doped materials, ITO layers, Impedance, Indium oxide, Ohmic contact, Organic chlorine compounds, Organic semiconductors, Time of flight method, Tin addition, Transparent material, Work function.

Abstract

Admittance spectroscopy (AS) is a simple technique to measure the carrier mobility of organic semiconductors, but requires an Ohmic contact for charge injection. Chlorinated indium tin oxide (CI-ITO) is shown to be a good charge injecting electrode for AS due to its high work function of >6.1 eV. The mobility of N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (α-NPD) measured with Cl-ITO was found to be in excellent agreement with the value measured by time of flight. Cl-ITO is therefore an ideal electrode for AS since it possesses a high work function, but does not introduce any series impedance into the device structure.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002C09
to stream Main, to step Repository: 003314
to stream Chine, to step Extraction: 000936

Links to Exploration step

Pascal:11-0360212

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy</title>
<author><name sortKey="Helander, M G" uniqKey="Helander M">M. G. Helander</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Toronto, 184 College St.</s1>
<s2>Toronto, Ontario, M5S 3E4</s2>
<s3>CAN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Canada</country>
<wicri:noRegion>Toronto, Ontario, M5S 3E4</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wang, Z B" uniqKey="Wang Z">Z. B. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Toronto, 184 College St.</s1>
<s2>Toronto, Ontario, M5S 3E4</s2>
<s3>CAN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Canada</country>
<wicri:noRegion>Toronto, Ontario, M5S 3E4</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lu, Z H" uniqKey="Lu Z">Z. H. Lu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Toronto, 184 College St.</s1>
<s2>Toronto, Ontario, M5S 3E4</s2>
<s3>CAN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Canada</country>
<wicri:noRegion>Toronto, Ontario, M5S 3E4</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Yunnan University, 2 Cuihu Beilu</s1>
<s2>Yunnan, Kunming 650091</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Yunnan, Kunming 650091</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0360212</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0360212 INIST</idno>
<idno type="RBID">Pascal:11-0360212</idno>
<idno type="wicri:Area/Main/Corpus">002C09</idno>
<idno type="wicri:Area/Main/Repository">003314</idno>
<idno type="wicri:Area/Chine/Extraction">000936</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1566-1199</idno>
<title level="j" type="abbreviated">Org. electron. : (Print)</title>
<title level="j" type="main">Organic electronics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Admittance</term>
<term>Biphenyl derivatives</term>
<term>Charge carrier mobility</term>
<term>Conducting material</term>
<term>Doped materials</term>
<term>ITO layers</term>
<term>Impedance</term>
<term>Indium oxide</term>
<term>Ohmic contact</term>
<term>Organic chlorine compounds</term>
<term>Organic semiconductors</term>
<term>Time of flight method</term>
<term>Tin addition</term>
<term>Transparent material</term>
<term>Work function</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term>
<term>Couche ITO</term>
<term>Admittance</term>
<term>Mobilité porteur charge</term>
<term>Contact ohmique</term>
<term>Travail sortie</term>
<term>Méthode temps vol</term>
<term>Impédance</term>
<term>Chlore composé organique</term>
<term>Oxyde d'indium</term>
<term>Semiconducteur organique</term>
<term>Dérivé du biphényle</term>
<term>Matériau conducteur</term>
<term>Matériau transparent</term>
<term>Matériau dopé</term>
<term>7330</term>
<term>ITO</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Admittance spectroscopy (AS) is a simple technique to measure the carrier mobility of organic semiconductors, but requires an Ohmic contact for charge injection. Chlorinated indium tin oxide (CI-ITO) is shown to be a good charge injecting electrode for AS due to its high work function of >6.1 eV. The mobility of N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (α-NPD) measured with Cl-ITO was found to be in excellent agreement with the value measured by time of flight. Cl-ITO is therefore an ideal electrode for AS since it possesses a high work function, but does not introduce any series impedance into the device structure.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0>
</fA01>
<fA03 i2="1"><s0>Org. electron. : (Print)</s0>
</fA03>
<fA05><s2>12</s2>
</fA05>
<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HELANDER (M. G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WANG (Z. B.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LU (Z. H.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Toronto, 184 College St.</s1>
<s2>Toronto, Ontario, M5S 3E4</s2>
<s3>CAN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Yunnan University, 2 Cuihu Beilu</s1>
<s2>Yunnan, Kunming 650091</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>1576-1579</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27255</s2>
<s5>354000508520530180</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0360212</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Admittance spectroscopy (AS) is a simple technique to measure the carrier mobility of organic semiconductors, but requires an Ohmic contact for charge injection. Chlorinated indium tin oxide (CI-ITO) is shown to be a good charge injecting electrode for AS due to its high work function of >6.1 eV. The mobility of N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (α-NPD) measured with Cl-ITO was found to be in excellent agreement with the value measured by time of flight. Cl-ITO is therefore an ideal electrode for AS since it possesses a high work function, but does not introduce any series impedance into the device structure.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F01</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C30</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Admittance</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Admittance</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Admitancia</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Mobilité porteur charge</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Charge carrier mobility</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Movilidad portador carga</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Contact ohmique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Ohmic contact</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Contacto óhmico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Travail sortie</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Work function</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Función de trabajo</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Méthode temps vol</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Time of flight method</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Método tiempo vuelo</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Impédance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Impedance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Impedancia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Chlore composé organique</s0>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Organic chlorine compounds</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur organique</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Organic semiconductors</s0>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Dérivé du biphényle</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Biphenyl derivatives</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Bifenilo derivado</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Matériau conducteur</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Conducting material</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Material conductor</s0>
<s5>26</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Matériau transparent</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Transparent material</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Material transparente</s0>
<s5>27</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>7330</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>249</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000936 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000936 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:11-0360212
   |texte=   Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy

Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri